本站提供的设计资料 都是已经做好的,现成的作品都是审核过的,保证质量和规范.
QQ临时会话 可能会导致消息无法正常接收,咨询前请务必先加客服为好友.QQ:869918441
提供 千万级庞大的文档数据资料,您可随时随地搜索下载您需要的精品文档
您专业的文档资料分享平台文库163论文查重检测

快速晶化法制备P型晶硅薄膜

来源:wenku163.com  资料编号:WK1639384  文件类型:  资料等级: %D7%CA%C1%CF%B1%E0%BA%C5%A3%BAWK1639384
以下是大纲介绍,如需完整的请购买下载。
提示:本资料已审核通过,内容严格保密,格式标准,质量保证。
1.无需注册,购买下载即可获取完整资料。
2.购买后本站提供下载链接或联系客服。

快速晶化法制备P型晶硅薄膜(含任务书,开题报告,外文翻译,毕业论文13000字,答辩PPT)
摘要
    随着传统能源的枯竭,太阳能这种新型清洁能源越来越受到人们的重视。作为太阳能电池的一种,薄膜电池以其优越的性能从中脱颖而出。本文在如何制备高质量多晶硅薄膜方面做了些探索性的研究,实验通过椭偏仪,四探针电阻测试仪对快速热处理(RTP)前后的等离子体增强化学气相沉积(PECVD)法在石英衬底上沉积的B元素掺杂的P型薄膜的厚度和方块电阻进行了测试分析。其中快速热处理的方法是,在保温温度950℃-1150℃,保温时间10-20s的参数范围内对样品进行处理。通过对比在温度和时间这两个变量下热处理后的结晶化效果,得出最优热处理条件。
    研究结果发现,硅薄膜热处理之后的电阻率远远小于热处理之前的电阻率,并且它的厚度也明显减小。同时我们还发现,热处理温度与时间对非晶硅薄膜的晶化都有很大的影响。在950℃至1150℃的范围内热处理10s的情况下,随着温度的升高,电阻率越低,最低可达1.226×10-4Ω•m;在热处理20s的情况下,随着温度的升高,电阻率先减小后增大,在1100℃时电阻率最小,其值是1.115×10-4Ω•m。当温度相同,在1150℃以下时,热处理时间越长,电阻率越低;温度达到1150℃后,10s时的电阻率小于20s时的电阻率。

〖文库163网 HTTP://www.wenku163.com 咨询QQ:281788421〗

关键词: p型多晶硅薄膜;晶化;快速热处理;电阻率。
 
 
Solid phase crystallization of p-type silicon films by rapid thermal processing    
Abstract
  As a new clean energy, solar energy has got more and more attention. As a kind of solar cells, thin film stand out from all of them for it's superior performance. This thesis has done some exploratory research on high quality polycrystalline silicon thin film. The p- type amorphous silicon films were prepared by PECVD first. Then, they were annealed by rapid heat treatment. Ellipsometer and four point probe square resistance tester were used to test the thickness and resistivity of the samples before and after the annealing process. The plateau temperature and the plateau time varied in the range of 800℃-1150 ℃and 10s-20s, in order to find the optimal paremeters for the process.
  The results showed that the resistivities of silicon thin films after heat treatment decreases heavily than those before the heat treatment, and the thicknesses of the silicon thin film decreased obviously, also. At the same time it is also found that the plateau temperature and time of the heat treatment has great effect on crystallization of amorphous silicon thin films. Under the condition of 10 s heat treatment, and in the range of 950 ℃ to 1150 ℃, with the increase of the temperature, the resistivity will become more and more low until reached 1.226×10-4Ω•m; when under the condition of 20 s heat treatment, with the increase of temperature, the resistivity decreases firstly and then increased, at 1100 ℃ the resistivity is lowest, the value is 1.115×10-4Ω•m . Below 1150 ℃, the shorter the time of heat treatment, the lower the resistivity . Opponently, when the temperature reached 1150 ℃, the resistivity of the sample with a plateau time 10 s is less than that of the sample with a plateau time of 20 s. . 〖资料来源:WENKU163.COM 毕业设计(论文)网〗

Key words: P-type polycrystalline silicon thin film; crystallization; rapid heat treatment; resistivity.
 
〖资料来源:毕业设计(论文)网 WWW.wenku163.com〗

快速晶化法制备P型晶硅薄膜


目  录
摘要    I
Abstract    II
1、 引言    1
1.1太阳能电池概述    1
1.2多晶硅薄膜介绍    1
1.3多晶硅薄膜的制备方法    2
1.4本文研究内容与目的    8
2、 实验方法    9
2.1 非晶硅薄膜的制备    9
2.2 快速热处理(RTP)晶化非晶硅    9
2.3分析与测试    10
3、 结果与讨论    12
3.1 退火温度对电阻率的影响    12
3.2退火时间对电阻率的影响    14
3.3热处理对薄膜厚度的影响    15
4、结论    16
参考文献    17
致  谢    20 〖资料来源:毕业设计(论文)网 WWW.wenku163.com〗

发表留言 请自觉遵守互联网相关的政策法规,严禁发布色情、暴力的言论。
评价:
验证码:点击我更换图片
购买设计资料 专业定做 疑难咨询帮助
最新内容
今日推荐
本月推荐
分享到: 一键分享 新浪微博 QQ空间 腾讯微博 人人网 网易微博 百度搜藏 开心网 豆瓣网 我的淘宝 搜狐微博 百度新首页